Um den steigenden Anforderungen von Computerchips, besonders im Bereich von Mobilgeräten, gerecht zu werden, hat eine neuartige 3D Transistor Technologie vorgestellt: Durch die kleineren räumliche Abstände zwischen den einzelnen Transistoren, die einen Computer Chip ausmachen, sollen schnellere und effizientere in kleineren Paketen möglich werden.
Die neuen Ivy Bridget Prozessoren basieren auf 22 Nanometer-Technologie und sind laut Intel’s Presseaussendung um 37 % schneller als vergleichbare planare 32 nm Transistoren. Gleichzeitig ist der Stromverbrauch um ganze 50 % reduziert.

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Intel Tri Gate Transistoren

Intel’s scientists and engineers have once again reinvented the transistor, this time utilizing the third dimension. Amazing, world-shaping devices will be created from this capability as we advance Moore’s Law into new realms.

Besonders im Licht der Meldungen um einen Wechsel von Samsung zu Intel als Chiphersteller für Apple sind diese Neuigkeiten spannend: Schon bald könnten Apple-Geräte mit den neuen 3D-Chips ausgestattet werden.

httpvh://www.youtube.com/watch?v=YIkMaQJSyP8&feature=player_embedded

Wie es scheint, ist das Mooresche Gesetz damit vorerst abgedeckt. 😉

Ein Ausschnitt aus der Presseaussendung im Anschluss:

The 3-D Tri-Gate transistors are a reinvention of the transistor. The traditional “flat” two-dimensional planar gate is replaced with an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate. Control of current is accomplished by implementing a gate on each of the three sides of the fin – two on each side and one across the top — rather than just one on top, as is the case with the 2-D planar transistor. The additional control enables as much transistor current flowing as possible when the transistor is in the “on” state (for performance), and as close to zero as possible when it is in the “off” state (to minimize power), and enables the transistor to switch very quickly between the two states (again, for performance).

Just as skyscrapers let urban planners optimize available space by building upward, Intel’s 3-D Tri-Gate transistor structure provides a way to manage density. Since these fins are vertical in nature, transistors can be packed closer together, a critical component to the technological and economic benefits of Moore’s Law. For future generations, designers also have the ability to continue growing the height of the fins to get even more performance and energy-efficiency gains.

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